Observing “quantized” conductance steps in silver sulfide: Two parallel resistive switching mechanisms
نویسندگان
چکیده
منابع مشابه
High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO2 on Silicon
TiO2 has been investigated extensively as an active resistive switching (RS) material for resistive random access memory. In this letter, single-crystal anatase-TiO2 thin films fabricated on silicon by atomic layer deposition are used to realize highly stable and clean bipolar RS behavior with a record high ON/OFF ratio (∼107) and low leakage current in the highresistance state. The switching c...
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TiO2 is being widely explored as an active resistive switching (RS) material for resistive random access memory. We report a detailed analysis of the RS characteristics of single-crystal anatase-TiO2 thin films epitaxially grown on silicon by atomic layer deposition. We demonstrate that although the valence change mechanism is responsible for the observed RS, single-crystal anatase-TiO2 thin fi...
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Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current-voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal-insulator-metal junctions. Silver nanoparticles prepared via the polyol process and...
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Ionic transport in nanopores is a fundamentally and technologically important problem in view of its occurrence in biological processes and its impact on novel DNA sequencing applications. Using molecular dynamics simulations we show that ion transport may exhibit strong nonlinearities as a function of the pore radius reminiscent of the conductance quantization steps as a function of the transv...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3672824